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1/12 september 2002 stp4nm60 STD3NM60 - STD3NM60-1 n-channel 600v - 1.3 w - 3a to-220/dpak/ipak zener-protected mdmesh?power mosfet n typical r ds (on) = 1.3 w n high dv/dt and avalanche capabilities n improved esd capability n low input capacitance and gate charge n low gate input resistance n tight process control and high manufactoring yields description the mdmesh ? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the companys powermesh? horizontal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the companys proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completitions products. applications the mdmesh? family is very suitable for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies. ordering information type v dss r ds(on) i d pw stp4nm60 STD3NM60 STD3NM60-1 600 v 600 v 600 v < 1.5 w < 1.5 w < 1.5 w 4 a 3 a 3 a 69 w 42 w 42 w sales type marking package packaging stp4nm60 p4nm60 to-220 tube STD3NM60t4 d3nm60 dpak tape & reel STD3NM60-1 d3nm60 ipak tube to-220 ipak dpak 1 3 3 2 1 internal schematic diagram
stp4nm60 / STD3NM60 / STD3NM60-1 2/12 absolute maximum ratings ( l ) pulse width limited by safe operating area (1) i sd 3a, di/dt 400 a, v dd v (br)dss , t j t jmax. thermal data avalanche characteristics gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the devices esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit stp4nm60 STD3NM60 STD3NM60-1 v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 43a i d drain current (continuous) at t c = 100c 2.52 1.9 a i dm ( l ) drain current (pulsed) 16 12 a p tot total dissipation at t c = 25c 69 42 w derating factor 0.55 0.33 w/c dv/dt (1) peak diode recovery voltage slope 15 v/ns t j t stg operating junction temperature storage temperature -65 to 150 -65 to 150 c c to-220 dpak ipak rthj-case thermal resistance junction-case max 1.82 3 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 1.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 200 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v
3/12 stp4nm60 / STD3NM60 / STD3NM60-1 electrical characteristics (t case =25c unless otherwise specified) on/off dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 5 a v gs(th) gate threshold voltage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 1.5 a 1.3 1.5 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 1.5 a 2.7 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 324 132 7.4 pf pf pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 300 v, i d = 1.5 a r g = 4.7 w v gs = 10 v (resistive load see, figure 3) 9 4 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480v, i d = 3 a, v gs = 10v 10 3 4.7 14 nc nc nc symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 480 v, i d = 3 a, r g =4.7 w, v gs = 10v (inductive load see, figure 5) 16.5 10.5 15 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 3 12 a a v sd (1) forward on voltage i sd = 3 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3 a, di/dt = 100a/s v dd = 100 v, t j = 25c (see test circuit, figure 5) 224 1 9 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3 a, di/dt = 100a/s v dd = 100 v, t j = 150c (see test circuit, figure 5) 296 1.4 9.3 ns c a
stp4nm60 / STD3NM60 / STD3NM60-1 4/12 thermal impedance for dpak / ipak safe operating area for dpak / ipak safe operating area for to-220 transfer characteristics output characteristics thermal impedance for to-220
5/12 stp4nm60 / STD3NM60 / STD3NM60-1 normalized on resistance vs temperature normalized gate threshold voltage vs temp. capacitance variations gate charge vs gate-source voltage static drain-source on resistance transconductance
stp4nm60 / STD3NM60 / STD3NM60-1 6/12 source-drain diode forward characteristics
7/12 stp4nm60 / STD3NM60 / STD3NM60-1 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
stp4nm60 / STD3NM60 / STD3NM60-1 8/12 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
9/12 stp4nm60 / STD3NM60 / STD3NM60-1 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
stp4nm60 / STD3NM60 / STD3NM60-1 10/12 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
11/12 stp4nm60 / STD3NM60 / STD3NM60-1 tape and reel shipment (suffix t4)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
stp4nm60 / STD3NM60 / STD3NM60-1 12/12 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com

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